IWN 2024

12th International Workshop on Nitride Semiconductors
O'ahu, Hawai'i — Hilton Hawaiian Village

Invited Speakers

Growth Symposium

Alan Doolittle, Georgia Institute of Technology
Highly Conductive AlN Materials and Devices

Hajime Fujikura, Sumitomo Chemical
Recent Progress in HVPE-based GaN and AlGaN Growth

James Grandusky, Crystal IS
Development of 100 mm AlN Single-Crystal Growth and Subsequent Substrate Preparation

Douglas Irving, NC State University
Defect Equilibria as Related to Growth Conditions

Satoru Izumisawa, Mitsubishi Chemical Corporation
Development of high quality 4" GaN substrates/Scaling up Acidic Ammonothermal Crystal Growth for Mass Production of 4-inch GaN Substrates and Beyond

Taishi Kimura, Toyota Cent Res & Dev Labs Inc
Comprehensive Analysis of Lightly Doped N-Type Gallium Nitride Layer Grown via Halogen-Free Vapor Phase Epitaxy 

Tim Kolbe, Ferdinand-Braun-Institut
Advances in the Epitaxial Growth of Heterostructures for far-ultraviolet C Light Emitting Diodes

Stefano Leone, Fraunhofer Institute
AlScN and AlYN: From MOCVD Growth to Devices

Takashi Matsuoka, Tohoku University
The Underemphasized Concept of Crystal Polarity in Conventional Semiconductors and Its Device Application

Hisashi Murakami, Tokyo University of Agriculture and Technology
Growth of AlGaN by tri-halide VPE/Tri-Halide Vapor Phase Epitaxy of GaN and Related Ternary Alloy Crystals

Robert Nemanich, Arizona State University
Growth and Properties of Boron Nitride Grown on Diamond

Siddha Pimputkar, Lehigh University
Progress in Bulk Single Crystal Growth of Boron Nitride

Shadi Shahedipour-Sandvik, SUNY Polytechnic Institute
Novel Be Doping Techniques to Enable High-Efficiency P-Type III-Nitrides

Henryk Turski, Institute of High Pressure Physics
Epitaxy of III-Nitride Devices on Opposite Facets of the Same Polar Crystal: New Perspectives in Materials Engineering

Fujiwara Yasufumi, Osaka University

Control and Reconfiguration of Eu Emission Centers in GaN for Efficient Red LEDs

Optical and Optoelectronics Symposium

Robert Armitage, Lumileds
Development of InGaN LEDs for Display Applications

Daniel Feezell, University of New Mexico
Measurement of Carrier Dynamics in Commercial-Grade InGaN/GaN Light-Emitting Diodes Using Small-Signal Electroluminescence

Åsa Haglund, Chalmers University of Technology

Hideki Hirayama, RIKEN
Recent Progress of High Efficiency AlGaN far-UVC and UVB LEDs Fabricated on c-sapphire

Motoaki Iwaya, Meijo University
Current Status and Challenges of AlGaN-based UV-B Laser Diodes Fabricated on Lattice Relaxed AlGaN

Michael Kneissl, TU Berlin
Carrier Recombination, Transport Dynamics and Degradation in Far-UVC LEDs: Assessing Efficiency Limits

Hirotsugu Kobayashi, Asahi Kasei

Tomoaki Koizumi, Kyoto University
Realization of High-power and High-beam Quality Blue Photonic-crystal Surface-emitting Lasers

Maki Kushimoto, Nagoya University
Deep Ultraviolet Semiconductor Laser with Polarisation Control Technology

Kazuhiro Ohkawa, KAUST
InGaN-based Red Emitters on Sapphire and ScAlMgO4 Substrates

Marco Rosetti, Exalos
High-efficiency and Long-wavelength Green Laser Diodes and Superluminescent Diodes with AlInN Layers

Tetsuya Takeuchi, Meijo University
Progress on GaN-Based VCSELs

Claude Weisbuch, Ecole Polytechnique France/USCB
New Results in Nitrides Electro and Photoemission Spectroscopies: Band Structure, Carrier Injection and Transport, Electron Emission Microscopy

Thomas Wunderer, Palo Alto Research Center

Tunable Single-Frequency Photonic Integrated UV-A and Visible Laser Diodes

Nanoscale Symposium

Igor Aharonovich, UT-Sydney
Quantum Technologies with Hexagonal Boron Nitride

Hongxing Jiang, Texas Tech
Development of Quasi-bulk h-BN

Satoshi Kamiyama, Meijo University
InGaN/GaN Core-shell Nanowires Toward High-power and High-beam-quality Lasers

Jong-Kyu Kim, Postech
h-BN Grown by MOCVD for Photonics and Electronics Applications

Akihiko Kikuchi, Sophia University
Fabrication of GaN-based Nanostructures and Photonic Crystals by Hydrogen Environment Anisotropic Thermal Etching (HEATE)

Manos Kioupakis, University of Michigan
Monolayer III-nitrides

Xiuling Li, University of Texas, Austin
Unleaching MicroLED Potential: Damage-free Anisotropic Etching for Enhanced Pixel Density

Susumu Noda, Kyoto University
GaN-based Photonic Crystals for High-power and High-beam-quality PCSELs

Yong-Ho Ra, Jeonbuk National University
Nanowire Lasers Grown by MBE and MOCVD

Lars Samuelson, Institute of Nanoscience and Applications, SUSTech; NanoLund, Lund University; Hexagem AB
A Bottom-up Approach to Efficient Red-emitting MicroLEDs at Sub-µm Pixel Scale

Ulrich T. Schwarz, Technical University of Chemnitz
Estimating Loss Mechanisms in Short Wavelength Visible and UV PCSEL

Ian Sharp, Walter Schottky Institut, Munich University of Technology
Engineering III-N Interfaces via Atomic Layer Deposition: From Solar Fuels to 2D Materials Integration

Andreas Waag, Technische Universität Braunschweig
Structured Light by MicroLED Arrays - From Chip Processing to Optical Neuromorphic Computing

Songrui Zhao, McGill University

Epitaxial III-nitride Nanowire Lasers and Photodetectors

Characterization/Physics Symposium

Oliver Ambacher, University of Freiburg
Structural, Dielectric and Elastic Properties of ScAlN Layers for Applications in Piezoacoustic Devices

Gordon Callsen, University of Bremen
Combined Optical and Thermal Characterization of III-nitride Membranes by Microphotoluminescence and Raman Thermometry

Vanya Darakchieva, Linkoping University
THz Optical Hall Effect and THz EPR Ellipsometry 

Gregory Fuchs, Cornell University
Room Temperature Optically Detected Magnetic Resonance of Single Spins in GaN

Samuel Graham, University of Maryland
Thermal Conductance Across GaN/substrate Interfaces by Time-domain Thermo-reflectance 

Sylvia Hagedorn, Ferdinand-Braun-Institut
Origin of the Parasitic Luminescence of 235 nm UVC LEDs

Jennifer Hite, University of Florida
Development of GaN for Vertical Applications

Shuhei Ichikawa, Osaka University
Surface Carrier Dynamics of Nitride Semiconductors Evaluated by Time-resolved Photoemission Spectroscopy

Yoshihiro Ishitani, Chiba University
Phonon Dynamics Analysis of InGaN/GaN Heterostructures by Raman Spectroscopy Using a Double Laser System

Peter Parbrook, University College Cork
Prospects for Boron Containing Nitride Alloys for Visible and UV Optoelectronics

Stacia Keller, University of California, Santa Barbara
Growth and Characterization of Relaxed InGaN

Naoki Ohashi, NIMS
Polarization Switching in Unsubstituted AlN Thins Films

Jun Suda, Nagoya University

Characterization of Point Defects and Impurities in Nitrides

Electronic Devices Symposium

Andrew Binder, Sandia National Laboratory
An Outlook on Vertical Gallium Nitride Compared to Incumbent Technology

Peter Brückner, Fraunhofer
IAF GaN Technology Towards 200 GHz

Srabanti Chowdhury, Stanford University
Diamond Integration with III-Ns / GaN Vertical Device Development

Rongming Chu, The Pennsylvania State University
Superjunction Based Devices in GaN / High Voltage GaN Diodes and Transistors

Karen Geens (presented by Benoit Bakeroot), IMEC
GaN Power Devices on 200 mm QST Substrates

Brianna Klein, Sandia National Laboratory
Ultrawide Bandgap AlGaN transistors for High Operating Temperature Electronics

Martin Kuball, University of Bristol
Thermal Management of GaN HEMTs / Diamond in GaN Electronics

Takeru Kumabe, Nagoya University
Distributed Polarization Doping Enabled Al>0.7GaN p-n Diodes

Elison Matioli, EPFL
Advanced Power Devices / Novel III-N Devices

Farid Medjdoub, CNRS
Recent Progress of Vertical GaN-on-Silicon Devices

Matteo Meneghini, University of Padua
GaN for Advanced Power Applications

Tomas Palacios, Massachusetts Institute of Technology
CMOS GaN Technology and its Heterogenous Integration with Si Electronics

Spyros Pavlidis, NC State University
Harnessing Mg Implantation and Ultra-high Pressure Annealing for High-performance Vertical GaN Power Diodes

E. Bahat Treidel, Ferdinand-Braun-Institut
Vertical Devices on Bulk GaN and on Foreign Substrates

Douglas Yoder, Georgia Institute of Technology
Theoretical Analysis of GaN-based Gunn Effect Devices

Yuhao Zhang, Virginia Tech
Multidimensional Power Devices in GaN: Superjunction, Multi-channel, and FinFET